Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Development of a Through-Stack-via Integrated SRAM Module

Sealing Bump With Bottom-Up Cu TSV Plating Fabrication in 3-D Integration Scheme

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Bottom-up Copper Electroplating Using Transfer Wafers for Fabrication of High Aspect-Ratio Through-Silicon-vias

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Design and fabrication of a TSV interposer for SRAM integration

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

A Novel Chip-to-wafer (C2W) Three-Dimensional (3D) Integration Approach Using a Template for Precise Alignment

Opening the Hole of the Backside Silicon and Forming the Alloy Bump For TSVs

A New 2.5d Tsv Package Assembly Approach

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

A 3D Integration Testing Vehicle with TSV Interconnects

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding