Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

A New 2.5d Tsv Package Assembly Approach

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

A 3D Integration Testing Vehicle with TSV Interconnects

3D interconnection process development and integration with low stress TSV

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

Study on Opto-Mechatronic Hybrid Integration Technology Based on 2.5D Advanced Packaging

Research of Vertical via Based on Silicon, Ceramic and Glass

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Simulation and Optimization of 3D Heterogeneous Integration of Inertial Micro-System

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Integrated Algorithm for 3-D IC Through-Silicon Via Assignment

Development of high performance 2.5D packaging using glass interposer with through glass vias

Design and fabrication of a TSV interposer for SRAM integration