Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

An Insertion-Based Mechanical Interlock Cu-Sn Bonding Structure for Three-Dimensional Integration

Simulation Of Fast Room-Temperature Bonding By Mechanical Interlock Structure Applied For 3d Integration

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Design and fabrication of a TSV interposer for SRAM integration

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

A 3D Integration Testing Vehicle with TSV Interconnects

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

Heterogeneous Integration of MEMS Sensor Array and CMOS Readout IC with Through Silicon Via Interconnects

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology