Abstract:A multi-layer stacked Dynamic Random Access Memory (DRAM) platform is introduced to address the memory wall issue. This platform features high-density vertical interconnects established between DRAM units for high-capacity memory and logic units for computation, utilizing Wafer-on-Wafer (WoW) hybrid bonding and mini Through-Silicon Via (TSV) technologies. This 3DIC architecture includes commercial DRAM, logic, and 3DIC manufacturing processes. Their design documents typically come from different foundries, presenting challenges for signal integrity design and analysis. This paper establishes a lumped circuit based on 3DIC physical structure and calculates all values of the lumped elements in the circuit model with the transmission line model. A Cross-Process Signal Integrity Analysis (CPSIA) method is introduced, which integrates three different manufacturing processes by modeling vertical stacking cells and connecting DRAM and logic netlists in one simulation environment. In combination with the dedicated buffer driving method, the CPSIA method is used to analyze 3DIC impacts. Simulation results show that the timing uncertainty introduced by 3DIC crosstalk ranges from 31 ps to 62 ps. This analysis result explains the stable slight variation in the maximum frequency observed in vertically stacked memory arrays from different DRAM layers in the physical testing results, demonstrating the effectiveness of this CPSIA method.

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

A wafer level through-stack-via integration process with one-time bottom-up copper filling

Development and characterization of a through-multilayer TSV integrated SRAM module

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Development of a Through-Stack-via Integrated SRAM Module

A 3D Integration Testing Vehicle with TSV Interconnects

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Design and process development of a stacked SRAM memory chip module with TSV interconnection

Performance and reliability study of TGV interposer in 3D integration

A reliable Cu-Sn stack bonding technology for 3D-TSV packaging

Thermo-mechanical Reliability Analysis of 3D Stacked-Die Packaging with Through Silicon Via

Process Development and Reliability for Wafer-Level 3D IC Integration Using Micro-Bump/adhesive Hybrid Bonding and Via-Last TSVs

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Study of Three-Dimensional Small Chip Stacking Using Low Cost Wafer-Level Micro-bump/B-Stage Adhesive Film Hybrid Bonding and Via-Last TSVs

Design, Simulation, And Process Development For 2.5d Tsv Interposer For High Performance Processer Packaging

Process development of a stacked chip module with TSV interconnection

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

A Die Selection and Matching Method for Yield Enhancement of 3D-Stacked Memories

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Through-silicon-via technology for 3D integration