Abstract:Three-dimensional (3D) integrated circuit (IC) is regarded as an important way for the enhancement on the performance and integration density of IC to cope with the challenge of "the ending of the Moore's law".The 3D IC is suitable for the high density or heterogenous integration applications for its multi-layer stacked structure.Memory is one of the important applications of 3D integration technology for it is a typical high density product.3D memory,which increases memory density and bandwidth of memory access path simultaneously,is a promising solution of the "memory wall problem".With the scaling down of memory devices,the amount of faulty cells in memory array increases rapidly,it gives rise to the requirement of the build in self-repair (BISR) technique for acceptable memory reliability.The through silicon vias (TSVs),which works as the vertical signal paths in 3D memory,enable the inter-die sharing techniques of redundant resources for higher utilization ratio.This work proposes a sharing strategy of adjacent redundant cells across dies for better repair capability.This strategy is deadlock free,and it has good utility of redundant resources and relatively small area overhead of through silicon vias (TSVs).Simulation results show that,comparing with the published die-pair sharing strategy,the proposed strategy obtains higher repair rate.Furthermore,the proposed BISR has no obvious drop of repair rate with respect to the increase of the layer count,implying a good applicability in the large scale 3D memories.

A Die Selection and Matching Method for Yield Enhancement of 3D-Stacked Memories

Yield Enhancement for 3D-Stacked Memory by Redundancy Sharing Across Dies

Yield Optimization Technique for Three Dimensional Memory Based on Redundancy Sharing Among Adjacent Layers

A Stacking Scheme Using Adjacent Redundancy Across Dies for 3D-stacked Memory

A BISR Scheme for 3D Stacked Memory by Sharing Adjacent Redundancy Cells Across Dies

Yield Enhancement for 3D-Stacked ICs: Recent Advances and Challenges

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Bad-Die Recycling Technique for Yield Enhancement of Three-Dimensional Memories

Logic-DRAM Co-Design to Exploit the Efficient Repair Technique for Stacked DRAM

On Effective Through-Silicon Via Repair for 3-D-stacked ICs

On Effective Tsv Repair For 3d-Stacked Ics

Logic-DRAM co-design to efficiently repair stacked DRAM with unused spares

An Effective TSV Self-Repair Scheme for 3D-Stacked ICs.

Yield and Reliability Enhancement for 3D ICs

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Fault clustering technique for 3D memory BISR.

Yield-aware Time-Efficient Testing and Self-Fixing Design for TSV-based 3D ICs

Architecture design exploration of three-dimensional (3D) integrated DRAM

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Optimization of the 3D multi-level SOT-MRAMs

3D Finite Element Simulation Study of Chip Stacking Structure Considering Different Numbers of Stacked Dies and the Effects of Underfill and Intermetallic Compound Layer of Micro joints