Abstract:With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed. In contrast to STT-MRAM, the separation of read and write routes allows SOT-MRAM to have a lower error rate and higher lifetime, but this comes at the expense of the memory density. In recent years, vertical integrated circuits have relied on TSV to complete 3D stacking to ease the pressure of Moore's Law on scaling circuits. SOT-MRAM can take advantage of 3D stacking to reduce power and latency. More importantly, the density of SOT-MRAM can be improved at the same time. In the paper, simulation is conducted based on DESTINY, with the TSV model supplemented to NVSIM to evaluate the performance of MRAM 3D structures. The 3D SOT-MRAM structure in DESTINY can be implemented with a bus layer and interconnect structure between layers, which greatly reduces the expense of area. However, the 3D structure requires a more complex interconnect structure to truly meet the requirements of high density. For this reason, 3D model of unit interconnection using TSV is presented in the paper. Memory has several components, of which the memory array is the one with the largest area share. This paper explores the spatial structure of the array and proposes a new model which allows more complex interconnect structures to be accomplished on the same area.

Design and process development of a stacked SRAM memory chip module with TSV interconnection

Design and fabrication of a TSV interposer for SRAM integration

Development of a Through-Stack-via Integrated SRAM Module

Process Development of Multi-layer Stacked Chip Module

Development of CMOS-process-compatible interconnect technology for 3D-stacking of NAND flash memory chips

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

A 3D SoC Design for H.264 Application with On-Chip DRAM Stacking

A Customized Design Of Dram Controller For On-Chip 3d Dram Stacking

Optimization of the 3D multi-level SOT-MRAMs

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

A 135 GBps/Gbit 0.66 Pj/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Exploring the vulnerability of CMPs to soft errors with 3D stacked non-volatile memory

Thin Memory Chip Fabrication for Multi-stack Hybrid Bonding Applications

A 3D Packaging Technology for 4 Gbit Stacked DRAM with 3 Gbps Data Transfer

Highly Processable Wtsv Modular Manufacturing for Next Generation 3D MEMS/NEMS Integrated System