Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Thin Memory Chip Fabrication for Multi-stack Hybrid Bonding Applications

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

A 3D SoC Design for H.264 Application with On-Chip DRAM Stacking

A 135 GBps/Gbit 0.66 Pj/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV

A Customized Design Of Dram Controller For On-Chip 3d Dram Stacking

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Development of CMOS-process-compatible interconnect technology for 3D-stacking of NAND flash memory chips

Materials, Processing and Reliability of Low Temperature Bonding in 3D Chip Stacking

3D Chip Stack Technology Using Through-Chip Interconnects

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Hybrid Bonding for Ultra-High-Density Interconnect

Copper Bonding Technology in Heterogeneous Integration

Design and process development of a stacked SRAM memory chip module with TSV interconnection

Distributed memory interface synthesis for network-on-chips with 3D-stacked DRAMs

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Demystifying the Characteristics of 3D-Stacked Memories: A Case Study for Hybrid Memory Cube

A 3D Packaging Technology for 4 Gbit Stacked DRAM with 3 Gbps Data Transfer

Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems