Abstract:As Moore's law is running out of steam, advanced packaging has taken leadership to drive performance. On the one hand, the die area is constantly reduced especially for small package sizes and heterogeneous integration with high interconnect density becomes crucial. This is for example the case in IoT or mobile applications. On the other side, for large packages sizes heterogeneous integration and die segmentation gets an increasing role of processing applications. Here, heterogeneous integration leads to an overall increased yield, mainly as smaller dies generally can be produced with higher yield. In the same time and most importantly, memory, processors, sensors and such from different sources can be combined using heterogeneous integration. Combining segmented dies in an advanced package can be done by two different bonding technologies, namely sequential die bonding or a collective die bonding approach. For the collective bonding, individual dies are populated and tacked either on an interposer or a so-called handling carrier, depending on the bonding technology applied. In case of tacking die face-down on an interposer or other active silicon die, bonding is usually being done by thermal bonding. Here, heating and cooling of the substrates are only done once, considerably reducing process cost and thermal budget of the underlying substrate. The second case is tacking the dies face up on a carrier substrate. This reconstructed dies on a carrier can now be processes again on wafer scale, this means preprocessing steps such as direct bonding can be done before bonding the wafers using fusion or hybrid bonding. In this paper, we will show different integration approaches for collective die bonding for both thermal bonding as well as fusion / hybrid bonding. For both processes, results in terms of die placement and sequential alignment accuracy of the integrated process will be compared and discussed, together with current and potential applications of these processes for future devices.

Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems

Hybrid Bonding for Ultra-High-Density Interconnect

Heterogeneous Integration by Collective Die-To-Wafer Bonding

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

(Invited) Heterogeneous Photonic Integration by Direct Wafer Bonding

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers

Navigating Complex Process and Design Challenges in Hybrid Bonding for Advanced Semiconductor Integration: A Comprehensive Analysis

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Development of Low-Temperature Bonding Platform Using Ultra-Thin Area Selective Deposition for Heterogeneous Integration

Wafer Scale Flexible Interconnect Transfer for Hetrogeneous Integration

Research progress of hybrid bonding technology for three-dimensional integration

Wafer bonding for microsystems technologies

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Copper Bonding Technology in Heterogeneous Integration

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

Ultrastable 3D Heterogeneous Integration via N-Heterocyclic Carbene Self-Assembled Nanolayers

Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging