Abstract:With the size of transistors scaling down, 3D IC packaging emerged as one of the most promising solutions to achieve system integration on the track of Moore's Law. In this article, we demonstrated a sub-system with one 28nm logic device and two 40nm chips on a 600mm2 silicon interposer with Through-Silicon-Via (TSV) integrating 4 layers of high density interconnects. The packages were assembled using our proprietary CoWoS (Chip on Wafer on Substrate) technology that incorporated 270,000 micro-bump (μBump) and 8,700 C4 bumps. Comprehensive reliability characterization and test methods will be presented. It includes copper interconnect reliability of silicon interposer on EM, SM and IMD TDDB with the presence of TSV. μBump EM and TSV EM are characterized to provide a design guideline for maximum current carrying capability; the EM test methodology was also used to optimize the integrated process, e.g. TSV copper plating, μBump joint, and interface treatment of TSV revealing. Package process optimization, bill of material selectio n and qualificatio n we r e conducted on a 28nm Cu/ELK (Extreme low-K) test vehicle taking Chip-Package-Interaction into consideration. Not only component level package reliability tests were performed, board level Thermal Cycling, Power Cycling and Mechanical Shock tests were also executed to understand the reliability margin and potential failure modes in field use condition. The typical failure modes and mechanisms will be discussed. CoWoS technology is eventually successfully developed with enhanced reliability. The results highlight the importance of a highly integrated 3D IC technology from silicon wafer process to assembly packaging. This work shows that in the new paradigm of 3D IC integration, Si Foundry is positioned at a unique leadership to manage the innovation in Si processes and the improvement of Si assembly operating life.

Fabrication and Comparison of Bumpless Wafer-On-Wafer Integration and Bump-Containing Chip-On-Chip Integration

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Development of Equivalent Material Properties of Microbump for Simulating Chip Stacking Packaging

Reliability characterization of Chip-on-Wafer-on-Substrate (CoWoS) 3D IC integration technology

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

A Cross-Process Signal Integrity Analysis (CPSIA) Method and Design Optimization for Wafer-on-Wafer Stacked DRAM

Thin Memory Chip Fabrication for Multi-stack Hybrid Bonding Applications

Fabrication of High‐Density Micro‐Bump Arrays for 3D Integration of MEMS and CMOS

A Study on Improvement and Extension of Fine-Pitch Micro-Bump Interconnects Technology: New Metallurgy & Flux-Less Oxide-removal Laser Assembly (FLOLA)

Design and fabrication of a TSV interposer for SRAM integration

Interposer Connection Reliability Using Double-Side Solder Bump for Board-Level Vertical Interconnection

Development of two different molding methods in 2.5D package with 20 μm or less fine bump pitch CoW structure

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Effect of Different Material Systems on Interconnection Properties of 30μm Pitch Micro Bumps

Development of a Through-Stack-via Integrated SRAM Module

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

3D Finite Element Simulation Study of Chip Stacking Structure Considering Different Numbers of Stacked Dies and the Effects of Underfill and Intermetallic Compound Layer of Micro joints

Indium-based Flip-chip Interconnection by Electroplating Method for Superconducting Quantum 3D Integration Architecture