Abstract:Microbumps play a pivotal role in interlayer interconnections for advanced packaging. As chip integration density gradually increases, the pitch of microbumps continues to decrease. However, with continuous shrinkage in bump size, tin (Sn) solder spillage during high-temperature bonding has become a severe issue. Owing to the low yield strength of Sn, even a small applied pressure at elevated temperatures can induce excessive deformation. The excessive deformation of the Sn layer will not only deviate from the designed bump structure but also lead to a series of reliability concerns, such as sidewall depletion and joint bridging. Thinning the Sn layer thickness and employing reflow techniques are effective solutions to mitigate Sn spillage, but they are associated with excessive Kirkendall void formation and additional cleaning processes, respectively. In this work, an optimized bonding method for Sn-rich, fine-pitch microbump structures without a flux cleaning process is proposed. This technique combines an initial low-temperature solid-state diffusion (SSD) pre-bonding step and a subsequent rapid reflow process to complete the microbump interconnection. The influence of bonding temperature, bonding pressure, and formic acid environment on bonding quality is analyzed based on shear strength, cross-sectional images and electric tests. Ultimately, the optimized bonding parameters are determined to be pre-bonding at 200°C, 0.8 MPa for 1min, and reflow at 260°C for 1min. Reliable Cu-Sn bonding is achieved while retaining the original Sn profile as much as possible. The optimized bonding method is further validated on samples with different pitches and Sn layer thicknesses. This optimized bonding approach can facilitate accurate control of the bump profile and enable three-dimensional package integration.

Low-Temperature and Low-Pressure Fine-Pitch Micro Cu Bump Bonding Using Stress Migration of a Sputtering Ag Layer

20 μm Copper Micro-Bump Bonding Through a Silver Metallization for Advanced Packaging Under a Low Pressure Condition

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Optimization of Bonding Methods for Controlling Sn Spillage in Fine Pitch Microbump Applications

Low Temperature Cu-Cu Bonding Using Ag Nanoparticles By Pvd

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Fine-Pitch Cu-Sn Transient-Liquid-Phase Bonding Based on Reflow and Pre-Bonding

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Interfacial Morphology and Grain Orientation During Bumpless Direct Cu Bonding