Low-temperature Cu/SiO 2 hybrid bonding based on Ar/H 2 plasma and citric acid cooperative activation for multi-functional chip integration
Fanfan Niu,Xiaobing Wang,Shuhan Yang,Shijiao Xu,Yuyang Zhang,Tadatomo Suga,Chenxi Wang
DOI: https://doi.org/10.1016/j.apsusc.2023.159074
IF: 6.7
2023-12-05
Applied Surface Science
Abstract:Cu/SiO 2 hybrid bonding is a crucial technique for three-dimensional (3D) integration, which can greatly shorten the interconnected spacing by metal-electrode (Cu) and insulator (SiO 2 ) hybrid interfaces without requiring microbumps. By this bumpless hybrid bonding, the vertical stack of devices with ultrahigh density can be accomplished to meet the demand of high-performance artificial intelligence (AI) chips. To improve the compatibility for multi-functional chip integration, low-temperature bonding conditions are essential. Moreover, it is a great challenge to achieve oxide-free Cu/Cu bonding interface as well as ensure SiO 2 /SiO 2 bonding with sufficient hydroxylated groups. Therefore, we proposed a two-step cooperative activation process as argon and hydrogen gas mixture (Ar/H 2 ) plasma activation followed by citric acid treatment, which makes the Cu oxide reduction and SiO 2 hydroxylation simultaneously. The low-cost Cu/SiO 2 hybrid bonding was successfully obtained at 200 °C in ambient air. There were nearly neither oxides at Cu/Cu bonding nor residual carbon at SiO 2 /SiO 2 bonding interfaces. More interestingly, the bonding pairs not only survived in the aging tests in the range of 150–350 °C, but the bonding area and strength were further improved. Consequently, this two-step cooperative activation process has great potential for low-temperature Cu/SiO 2 hybrid bonding with high-temperature reliability.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films