Abstract:Cu-Cu direct bonding at low temperature with Cr wetting layer and Au passivation has been developed, and the bonding mechanism has been investigated. A chip-level Cu-to-Cu direct bonding can be achieved under a very low thermal budget condition at 70 °C for 90 s or 150 °C for 15 s, while wafer level bonding can be achieved at 100 °C under a low vacuum environment ( <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="4.658ex" height="2.676ex" style="vertical-align: -0.338ex;" viewBox="0 -1006.6 2005.4 1152.1" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-31"></use> <use xlink:href="#MJMAIN-30" x="500" y="0"></use><g transform="translate(1001,393)"> <use transform="scale(0.707)" xlink:href="#MJMAIN-2212" x="0" y="0"></use> <use transform="scale(0.707)" xlink:href="#MJMAIN-32" x="778" y="0"></use></g></g></svg></span> Torr) by deposition of capping metal layers, which can protect Cu from oxidation, as well as reduce surface roughness and grain size of Cu. During the bonding process, Cu atoms diffuse through Cr/Au layers into the bonding interface, forming a new inter-layer without voids to achieve high quality bonding. The phenomenon of recrystallization and effects of grain size have been validated by TEM analyses. This Cu-Cu bonding with capping metal layers scheme can enable bonding with ultra-low thermal budget, excellent bonding quality, good electrical performance and high reliability, showing the great feasibility for the 3D integration applications.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMAIN-31" d="M213 578L200 573Q186 568 160 563T102 556H83V602H102Q149 604 189 617T245 641T273 663Q275 666 285 666Q294 666 302 660V361L303 61Q310 54 315 52T339 48T401 46H427V0H416Q395 3 257 3Q121 3 100 0H88V46H114Q136 46 152 46T177 47T193 50T201 52T207 57T213 61V578Z"></path><path stroke-width="1" id="MJMAIN-30" d="M96 585Q152 666 249 666Q297 666 345 640T423 548Q460 465 460 320Q460 165 417 83Q397 41 362 16T301 -15T250 -22Q224 -22 198 -16T137 16T82 83Q39 165 39 320Q39 494 96 585ZM321 597Q291 629 250 629Q208 629 178 597Q153 571 145 525T137 333Q137 175 145 125T181 46Q209 16 250 16Q290 16 318 46Q347 76 354 130T362 333Q362 478 354 524T321 597Z"></path><path stroke-width="1" id="MJMAIN-2212" d="M84 237T84 250T98 270H679Q694 262 694 250T679 230H98Q84 237 84 250Z"></path><path stroke-width="1" id="MJMAIN-32" d="M109 429Q82 429 66 447T50 491Q50 562 103 614T235 666Q326 666 387 610T449 465Q449 422 429 383T381 315T301 241Q265 210 201 149L142 93L218 92Q375 92 385 97Q392 99 409 186V189H449V186Q448 183 436 95T421 3V0H50V19V31Q50 38 56 46T86 81Q115 113 136 137Q145 147 170 174T204 211T233 244T261 278T284 308T305 340T320 369T333 401T340 431T343 464Q343 527 309 573T212 619Q179 619 154 602T119 569T109 550Q109 549 114 549Q132 549 151 535T170 489Q170 464 154 447T109 429Z"></path></defs></svg>

Low-Temperature (70°C) Cu-to-Cu Direct Bonding by Capping Metal Layers

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Low-temperature Cu Cu Direct Bonding with Ultra-Large Grains Using Highly (110)-Oriented Nanotwinned Copper

Low temperature Cu bonding with large tolerance of surface oxidation

Thermal instability of nanocrystalline Cu enables Cu-Cu direct bonding in interconnects at low temperature

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Room temperature direct Cu-Cu bonding with ultrafine pitch Cu pads

Low temperature Cu–Cu direct bonding in air ambient by ultrafast surface grain growth

Thermal-stable Void-Free Interface Morphology and Bonding Mechanism of Low-Temperature Cu-Cu Bonding Using Ag Nanostructure As Intermediate

Enhancement of Low-Temperature Cu-Cu Bonding by Metal Alloy Passivation in Ambient Atmosphere

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Cu-Cu Bonding By Ag Nanostructure At Low Temperature Of 180 Degrees C

Low-temperature copper-copper quasi-direct bonding with cobalt passivation layer

Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3d Integration

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Reliable Cu-Cu Thermocompression Bonding by Low Temperature Sintered Cu Nanowires

Cu-Cu bonding by Ag nanostructure at low temperature of 180 °C

Low-Temperature Cu-Cu Bonding Process Based on the Sn-Cu Multilayer and Self-Propagating Reaction Joining

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Low-temperature and Low-Pressure Cu-Cu Bonding by Pure Cu Nanosolder Paste for Wafer-Level Packaging