Abstract:In order to lower Cu-Cu bonding temperature and shorten bonding time applied for 3D integration, nanostructure has been introduced on bonding Cu surface. However, few studies have been reported on Nano Particles (NPs) formation by film deposition process such as pulsed laser deposition (PLD), which would be compatible with CMOS process. In this work Ag nanostructure containing strings of NPs was formed by optimized PLD process, which is mostly used for nanofilm deposition. Then NPs morphology was observed by scanning electron microscope (SEM) and transmission electron microscopy (TEM). Ag nanostructure was consisted of strings of loose mesh structures filled with NPs with size range from several milometers to tens of nanometcrs. They were compressible and of high movability, which was significantly benefit for lowering bonding temperature. With these Ag nanostructure on Cu pads, chips were pre-bonding at the low temperature of 180 degrees C for 5 min and afterwards all the chips were simultaneously annealed at the temperature of 200 degrees C for 25 min. After die shear test, average shear strength of 15.8 MPa was obtained and fracture surface was inspected by SEM. After TEM observation of bonding interface, continuous Cu-Ag-Cu interfaces with almost no void were observed. It confirmed low temperature Cu-Cu bonding with Ag nanostructure by PLD was a reliable and time-saving process, which might be a promising technology for 3D integration.

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Low Temperature Cu-Cu Bonding Using Ag Nanoparticles By Pvd

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Preparation of PVP Coated Cu NPs and the Application for Low-Temperature Bonding

Low Temperature Bonding of Metals by Deposition of Nanoparticles at the Interface

Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3d Integration

Cu-Cu Bonding By Ag Nanostructure At Low Temperature Of 180 Degrees C

Characterization of low temperature bonding with Cu nanoparticles for electronic packaging application

Low temperature Cu bonding with large tolerance of surface oxidation

Low-temperature Cu Cu Direct Bonding with Ultra-Large Grains Using Highly (110)-Oriented Nanotwinned Copper

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Cu-Cu bonding by Ag nanostructure at low temperature of 180 °C

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Low-temperature copper-copper quasi-direct bonding with cobalt passivation layer

Rapid and Low Temperature Sintering Bonding Using Cu Nanoparticle Film for Power Electronic Packaging

Polymer-Protected Cu-Ag Mixed NPs for Low-Temperature Bonding Application

Thermal-stable Void-Free Interface Morphology and Bonding Mechanism of Low-Temperature Cu-Cu Bonding Using Ag Nanostructure As Intermediate

Investigation of Low-Pressure Sn-Passivated Cu-to-Cu Direct Bonding in 3D-Integration

Low Temperature Bonding of Cu Metal through Sintering of AgNanoparticles for High Temperature Electronic Application