Abstract:One three-dimensional (3-D) carbon-based heterogeneous interconnect scheme, consisting of a couple of horizontal multilayer graphene transmission lines (MLG-TL) and vertical through silicon carbon nanotube bundle vias (TS-CNTBV), is proposed and investigated theoretically. For its realization, some metallic bumps are used to integrate MLG-TLs with TS-CNTBVs, and contact resistance among them are characterized and compared. The lumped-element circuit model of a couple of MLG-TLs is also combined with that of TS-CNTBVs, with anomalous skin effect treated in an appropriate way. Numerical studies are performed for capturing distributed parameters as well as transmission characteristics of MLG-TLs, TS-CNTBVs, and whole 3-D interconnects at different operating frequencies. It is believed that this study can provide some useful information about carbon-based heterogeneous interconnects, where both graphene and carbon nanotube advantages can be exploited for the future 3-D ICs.

Analytical Model of the Coupling Capacitance Between Cylindrical Through Silicon Via and Horizontal Interconnect in 3D IC.

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Capacitive coupling analysis of TSV array in 3D packaging

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Capacitance Extraction of Three-Dimensional Interconnects Using Element-By-Element Finite Element Method (Ebe-Fem) and Preconditioned Conjugate Gradient (pcg) Technique

Electrothermal modelling of through silicon via (TSV) interconnects

Coupling capacitance extraction in through-silicon via (TSV) arrays

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Capacitance extraction of high-density 3D interconnects using finite element method

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

An Efficient Method for Comprehensive Modeling and Parasitic Extraction of Cylindrical Through-Silicon Vias in 3d Ics

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Analytical Formulas for the Barrel-Plate and Pad-Plate Capacitance in the Physics-Based Via Circuit Model for Signal Integrity Analysis of PCBs