Low‐temperature SOI SiGe/Si superlattice FinFET with omega‐shaped channel and self‐allied silicide for 3D sequential IC

Xu‐Lei Qin,Guan‐Qiao Sang,Lei Cao,Qing‐Kun Li,Ren‐Jie Jiang,Yan‐Zhao Wei,Jun‐Feng Li,Jia‐Xin Yao,Mei‐He Zhang,Qing‐Zhu Zhang,Hua‐Xiang Yin

DOI: https://doi.org/10.1049/ell2.70026

2024-11-08

Electronics Letters

Abstract:P‐type SiGe/Si stacked superlattice fin field‐effect transistors with high Ion and low Ioff have been realized on SOI substrates using a low‐temperature process, which provides meaningful guidance for future low‐temperature 3D sequential IC. In this letter, to improve the performance and reduce leakage currents of bulk low‐temperature multi‐layer SiGe/Si superlattice (SL) fin field‐effect transistors (FinFETs), a p‐type omega‐shaped channel (Ω‐channel) SL FinFET is realized by etching a Si/Si0.7Ge0.3 triple‐layer stacked structure in a replacement metal gate (RMG) module on a silicon‐on‐insulator (SOI) substrate. In addition, a self‐allied Ni0.9Pt0.1 silicide process and a low‐thermal‐budget (≤400°C) integration procedure were performed on the Ω‐channel SL FinFET. Test results demonstrate that the on‐state current (Ion) is increased by 5.5 times (from 78 to 429 μA/μm) and the off‐state current (Ioff) is reduced by 78.8% (from 5.2 × 10−3 to 1.1 × 10−3 μA/μm) when compared with the corresponding currents of traditional bulk SL FinFETs.

engineering, electrical & electronic