Abstract:The present study proposes an approach to enhance the DC and RF performance parameters of a double-gate tunnel field-effect transistor (DGTFET). The approach integrates an extended source with stacked drain layers of varying doping concentrations. This integration results in a drain-engineered extended source double-gate tunnel FET (DE-ES-DGTFET), demonstrating low ambipolarity and abrupt switching. The source and drain engineering enable the device to increase the ON-current while simultaneously reducing ambipolarity due to the large tunneling area with different drain doping concentrations. The optimization of the device's performance parameters was carried out by varying the doping concentration of the stacked drain, source length, and thickness of the drain. The proposed device achieved significant improvements compared to conventional DGTFETs, including a two-decade reduction in ambipolar current, an order of improvement in the ON-current ( I ON ) of ~ 10 −5 A/ μ m, two orders of reduction in ambipolarity ( I Amb ) 5.91 × 10 −17 A/ μ m, two orders of enhancement in ratio I ON / I OFF of − 10 13 , a subthreshold swing (SS) of 23.3 mV/dec, and nearly a two-fold increase in cut-off frequency ( f T ), and a transit time ( ) ~ 80 ps have been accomplished.

Double-gate Tunneling FET with Asymmetric Gate Structure and Pocket Source

Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance

High performance tunnel field-effect transistor by gate and source engineering.

Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET

Compact Model for Double-Gate Tunnel FETs with Gate–Drain Underlap

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique