A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

Chunlei Wu,Qianqian Huang,Yang Zhao,Jiaxin Wang,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1109/TED.2016.2619694

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively larger bandgap material and an underlying source layer with smaller bandgap materials. Since smaller bandgap materials exhibit much higher band-to-band...