Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

A Novel Recessed-Channel Tunneling Fet Design with Boosted Drive Current and Suppressed Leakage Current

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Design of U-Shape Channel Tunnel FETs with SiGe Source Regions

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

A Sub-10nm U-Shape Finfet Design with Suppressed Leakage Current and Dibl Effect

Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High ${I} _{\scriptscriptstyle\text {ON}}/{I} _{\scriptscriptstyle\text {OFF}}$ Ratio and Steep Swing

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

High performance tunnel field-effect transistor by gate and source engineering.

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation