Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review

Chloe Isabella Tsang,Haihui Pu,Junhong Chen

2024-09-26

Abstract:Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These limitations include increased leakage currents, pronounced short-channel effects (SCEs), and quantum tunneling through the gate oxide, leading to higher power consumption and deviations from ideal behavior. Tunnel Field-Effect Transistors (TFETs) can overcome these challenges by utilizing quantum tunneling of charge carriers to switch between on and off states and achieve a subthreshold swing (SS) below 60 mV/decade. This allows for lower power consumption, continued scaling, and improved performance in low-power applications. This review focuses on the design and operation of TFETs, emphasizing the optimization of device performance through material selection and advanced simulation techniques. The discussion will specifically address the use of two-dimensional (2D) materials in TFET design and explore simulation methods ranging from multi-scale (MS) approaches to machine learning (ML)-driven optimization.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The paper aims to address the issues faced by traditional Complementary Metal-Oxide-Semiconductor (CMOS) and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) when device sizes are reduced to the limits of Moore's Law. These issues include increased leakage current, significant short-channel effects (SCEs), and quantum tunneling of the gate oxide layer, leading to higher power consumption and deviation from ideal behavior. The paper specifically focuses on Tunnel Field-Effect Transistors (TFETs), which switch states through quantum tunneling carriers. This mechanism can achieve a subthreshold swing (SS) of less than 60 mV/decade, thereby reducing power consumption, continuing size reduction, and improving performance in low-power applications. The paper emphasizes the design and operation of TFETs, particularly the optimization in material selection and advanced simulation techniques. Specifically, it explores the application of two-dimensional (2D) materials in TFET design and simulation methods ranging from multi-scale (MS) approaches to machine learning (ML)-driven optimization. These studies aim to improve TFET performance by selecting appropriate material systems, optimizing device geometry, and other factors, particularly enhancing tunneling rates and reducing subthreshold swing. Additionally, the paper provides a detailed analysis of the potential of different 2D material systems and significant heterojunctions in TFET design, as well as their performance in meeting the International Device and Systems Roadmap (IDRS) targets for high-performance future digital applications.

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