Abstract:A reliable one‐step van der Waals integration technique is developed for centimeter‐scale transfer printing of multilayer top‐gate stacks. This technique enables the realization of superior electrical performance and threshold voltage control in MoS2 transistors. Depletion‐mode Al‐gated transistors and enhancement‐mode Au‐gated transistors are utilized to construct inverters, logic gates, static random‐access memory, and ring oscillators, demonstrating the functionality of multi‐threshold 2D circuits. Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage (Vth) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS2 FETs with a Vth of −0.2 V and Au‐gated MoS2 FETs with a Vth of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.

Two-dimensional Semiconductor Integrated Circuits Operating at Gigahertz Frequencies

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

MoS2 Transistors Operating at Gigahertz Frequencies

Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Process integration and future outlook of 2D transistors

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Two dimensional semiconducting materials for ultimately scaled transistors

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

High-performance Two-Dimensional Transistors and Circuits

Chemical assembly of atomically thin transistors and circuits in a large scale

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Simultaneous synthesis and integration of two-dimensional electronic components

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Integration of 2D Material-Based Electronic Devices on Flexible Substrates for Millimeter Wave Applications

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS