Abstract:The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance 1,2 . Transition-metal dichalcogenides can sustain transistor scaling to the end of roadmap, but despite a myriad of efforts, the device performance remains contact-limited 3,4,5,6,7,8,9,10,11,12 . In particular, the contact resistance has not surpassed that of covalently bonded metal–semiconductor junctions owing to the intrinsic van der Waals gap, and the best contact technologies are facing stability issues 3,7 . Here we push the electrical contact of monolayer molybdenum disulfide close to the quantum limit by hybridization of energy bands with semi-metallic antimony ( ) through strong van der Waals interactions. The contacts exhibit a low contact resistance of 42 ohm micrometres and excellent stability at 125 degrees Celsius. Owing to improved contacts, short-channel molybdenum disulfide transistors show current saturation under one-volt drain bias with an on-state current of 1.23 milliamperes per micrometre, an on/off ratio over 10 8 and an intrinsic delay of 74 femtoseconds. These performances outperformed equivalent silicon complementary metal–oxide–semiconductor technologies and satisfied the 2028 roadmap target. We further fabricate large-area device arrays and demonstrate low variability in contact resistance , threshold voltage, subthreshold swing, on/off ratio, on-state current and transconductance 13 . The excellent electrical performance, stability and variability make antimony ( ) a promising contact technology for transition-metal-dichalcogenide-based electronics beyond silicon.

Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

Doping for ohmic contacts in 2D transistors

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Charged-impurity free printing-based diffusion doping in molybdenum disulfide field-effect transistors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Approaching the quantum limit in two-dimensional semiconductor contacts

Contact-induced doping in aluminum-contacted molybdenum disulfide

Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

Nanoforming of transferred metal contacts for enhanced two-dimensional field effect transistors

ZrTe 2 Compound Dirac Semimetal Contacts for High-Performance MoS 2 Transistors

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors