Abstract:Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky-Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

ZrTe 2 Compound Dirac Semimetal Contacts for High-Performance MoS 2 Transistors

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Two-step Chemical Vapor Deposition Synthesis of NiTe2-MoS2 Vertical Junctions with Improved MoS2 Transistor Performance.

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

Bi-MoSe 2 Contacts in the Ultraclean Limit: Closing the Theory-Experiment Loop

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Contact Engineering High-Performance n-Type MoTe2 Transistors

Two-step chemical vapor deposition synthesis of NiTe 2 -MoS 2 vertical junctions with improved MoS 2 transistor performance

Contact Engineering High Performance n-Type MoTe2 Transistors

A new insight for ohmic contacts to MoS 2 : by tuning MoS 2 affinity energies but not metal work-functions.

Approaching the quantum limit in two-dimensional semiconductor contacts

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Enhancing MoS2 Electronic Performance with Solid-State Lithium-Ion Electrolyte Contacts Through Dielectric Screening.

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

2D/2D Electrical Contacts in the Monolayer WSe2 Transistors: A First-Principles Study