Abstract:The junctions formed at the contact between metallic electrodes and semiconductor materials are crucial components of electronic and optoelectronic devices1. Metal–semiconductor junctions are characterized by an energy barrier known as the Schottky barrier, whose height can, in the ideal case, be predicted by the Schottky–Mott rule2–4 on the basis of the relative alignment of energy levels. Such ideal physics has rarely been experimentally realized, however, because of the inevitable chemical disorder and Fermi-level pinning at typical metal–semiconductor interfaces2,5–12. Here we report the creation of van der Waals metal–semiconductor junctions in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning. The Schottky barrier height, which approaches the Schottky–Mott limit, is dictated by the work function of the metal and is thus highly tunable. By transferring metal films (silver or platinum) with a work function that matches the conduction band or valence band edges of molybdenum sulfide, we achieve transistors with a two-terminal electron mobility at room temperature of 260 centimetres squared per volt per second and a hole mobility of 175 centimetres squared per volt per second. Furthermore, by using asymmetric contact pairs with different work functions, we demonstrate a silver/molybdenum sulfide/platinum photodiode with an open-circuit voltage of 1.02 volts. Our study not only experimentally validates the fundamental limit of ideal metal–semiconductor junctions but also defines a highly efficient and damage-free strategy for metal integration that could be used in high-performance electronics and optoelectronics.

Hydrogen-bonding enables two-dimensional metal/semiconductor tunable contacts approaching the quantum limit and the modified Schottky-Mott limit simultaneously

Hydrogen‐Bonding Integrated Low‐Dimensional Flexible Electronics beyond the Limitations of Van Der Waals Contacts

Hydrogen‐Bonding Integrated Low‐Dimensional Flexible Electronics Beyond the Limitations of van der Waals Contacts (Adv. Mater. 35/2024)

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Approaching the quantum limit in two-dimensional semiconductor contacts

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

One-dimensional semimetal contacts to two-dimensional semiconductors

Contact engineering for two-dimensional metal/qHP C60 van der Waals heterostructure

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Two-dimensional Metallic Alloy Contacts with Composition-Tunable Work Functions

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors

Stable Ohmic contacts achieved in hydrogenated graphene/C 3 B van der Waals heterojunctions

Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts