Abstract:Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky-Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

A new insight for ohmic contacts to MoS 2 : by tuning MoS 2 affinity energies but not metal work-functions.

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Bridging the gap between atomically thin semiconductors and metal leads

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Approaching the quantum limit in two-dimensional semiconductor contacts

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution

Study of Interfacial Strain at the Α-Al2o3/monolayer MoS2 Interface by First Principle Calculations

Strain-engineering in two-dimensional transition metal dichalcogenide alloys