Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Electron and Hole Mobilities in Single-Layer WSe2

Optimizing Charge Injection Across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low Resistance Contact to P-Type Monolayer WSe2

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

2D/2D Electrical Contacts in the Monolayer WSe2 Transistors: A First-Principles Study

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform