Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Gate controlled quantum dots in monolayer WSe2

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Optically Active Quantum Dots in Monolayer WSe$_2$

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

Stable quantum dots in an InSb two-dimensional electron gas

Interacting holes in gated WSe$_2$ quantum dots

Gate‐Controlled Quantum Dots Based on 2D Materials

Gate‐Defined Quantum Confinement in CVD 2D WS2 (Adv. Mater. 25/2022)

Gate‐Defined Quantum Confinement in CVD 2D WS 2

Interacting holes in a gated WSe$_2$ quantum channel: valley correlations and zigzag Wigner crystal

Theory of excitonic complexes in gated WSe$_2$ quantum dots

Coupled vertical double quantum dots at single-hole occupancy

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)

Gate-modulated Conductance of Few-Layer WSe_2 Field-Effect Transistors in the Subgap Regime: Schottky Barrier Transistor and Subgap Impurity States

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Quantum dots with split enhancement gate tunnel barrier control

Gate controlled spin-valley locking of resident carriers in WSe2 monolayers

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells