Abstract:The generation of Schottky barrier height (SBH) at the metal–semiconductor junctions (MSJ)is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge distribution theory is an effective approach to study the generation of SBHs at the interface, and it has not been studied in depth so far. In this paper, two groups of metal–semiconductor (Pt-MoS2 and Ni-MoS2) and semimetal-semiconductor (Bi-MoS2 and Bi-WSe2) structures are designed, and their charge redistribution mechanisms are studied by the first-principles density functional theory (DFT). The result shows that the band gaps at the interfaces of Pt-MoS2 and Ni-MoS2 are 0.73 eV and 0.68 eV, respectively, and a large SBH is appeared, while the band gaps at the interface of Bi-MoS2 and Bi-WSe2 are basically not exist. The large SBHs are produced at metal–semiconductor (M−S) interfaces due to the push-back effect and metal-induced gap states (MIGS). The weak orbitals and special density of states (DOS) (near-zero DOS at the Fermi level) of Bi atoms at the semimetal-semiconductor (S-S) interface can avoid orbital hybridization and fill the band gap, thus an Ohmic Contact is formed. Additionally, stress modulation is also performed for both sets of interfaces, and the comparison shows that M−S interface is more sensitive to stress modulation than the S-S interface, and the stress has the most pronounced effect on the interface dipole (ΔV), especially at the M−S interfaces. These calculations provide a theoretical complement to the mechanism of ultra-low contact resistance formation at MSJ, bringing new theory and insight into the development of two-dimensional semiconductor devices.

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Tunable Contact Resistance in Transition Metal Dichalcogenide Lateral Heterojunctions

Schottky-Ohmic Transition in Metal-All-around Electrical Contacts to Silicon Nanowires

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts

Low Resistance Contact to P-Type Monolayer WSe2

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Interfacial Properties of Monolayer and Bilayer MoS 2 Contacts with Metals: Beyond the Energy Band Calculations

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Electrical contact properties between Yb and few-layer WS$_2$

Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS 2 Transistors