Abstract:Monolayer WS2 has been a competitive candidate in electrical and optoelectronic devices due to its superior optoelectronic properties. To tackle the challenge of thermal management caused by the decreased size and concentrated heat in modern ICs, it is of great significance to accurately characterize the thermal conductivity of the monolayer WS2, especially with substrate supported. In this work, the dual-wavelength flash Raman method is used to experimentally measure the thermal conductivity of the suspended and the Si/SiO2 substrate supported monolayer WS2 at a temperature range of 200 K - 400 K. The room-temperature thermal conductivity of suspended and supported WS2 are 28.45 W/mK and 15.39 W/mK, respectively, with a ~50% reduction due to substrate effect. To systematically study the underlying mechanism behind the striking reduction, we employed the Raman spatial mapping analysis combined with the molecular dynamics simulation. The analysis of Raman spectra showed the increase of doping level, reduction of phonon lifetime and suppression of out-of-plane vibration mode due to substrate effect. In addition, the phonon transmission coefficient was mutually verified with Raman spectra analysis and further revealed that the substrate effect significantly enhances the phonon scattering at the interface and mainly suppresses the acoustic phonon, thus leading to the reduction of thermal conductivity. The thermal conductivity of other suspended and supported monolayer TMDCs (e.g. MoS2, MoSe2 and WSe2) were also listed for comparison. Our researches can be extended to understand the substrate effect of other 2D TMDCs and provide guidance for future TMDCs-based electrical and optoelectronic devices.

Electrical contact properties between Yb and few-layer WS$_2$

Electrical Contact Properties Between Yb and Few-Layer WS2

Schottky Contact in Monolayer WS2 Field‐Effect Transistors

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Dielectric Functions and Critical Points of Crystalline WS2 Ultrathin Films with Tunable Thickness.

Electronic Structure of Yb/H–Si (111) Interface

Substrate effect on thermal conductivity of monolayer WS2: Experimental measurement and theoretical analysis

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Reduction in Thermal Conductivity of Monolayer WS2 Caused by Substrate Effect

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Electronic contacts and lubricity characteristics between monolayer WSe2 and Zr2C, Zr2CY2 (Y = F or OH)

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-Wse_2 Monolayers

Robust Coulomb Gap and Varied-temperature Study of Epitaxial 1T'-WSe$_2$ Monolayers

Monolayer Superconductivity in Ws2

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

High intrinsic phase stability of ultrathin 2M WS2

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts