Abstract:Van der Waals heterostructures (vdWHs) open the possibility of creating novel semiconductor materials at the atomic scale that display totally new physics and enable unique functionality, and that have attracted great interest in advanced electronic devices as well as optoelectronic devices. However, the interaction between metals and vdWHs semiconductors still poses a puzzle, as it directly affects or limits the advancement of high-performance electronic devices. Here we study the contact behavior of MoS2/WSe2 vdWHs in contact with a series of bulk metals, based on ab initio electronic structure calculations and quantum transport simulations. Our study shows dual transmission paths exist in metal–MoS2/WSe2 hetero-bilayer interfaces for electrons and holes respectively. In addition, metal-induced bandgap state (MIGS) of original monolayer disappears due to the insertion of heterolayer, which weakens the Fermi level pinning (FLP) effect. We also find that the insertion of heterolayer has apparently adjustment to the Schottky barrier height (SBH) of non-ohmic contact systems, on the contrary, which are not taking place so easily in ohmic contact systems. In addition, our results indicate that when Al, Ag and Au contact with MoS2/WSe2 hetero-bilayer semiconductor, low contact barrier exists in the whole transmission process that the charge tunnels to MoS2 layer, whether MoS2 contacts with metals as the nearest layer, or not as the next-nearest layer. Our work not only offers new insights into electric contact issues between metals and hetero-bilayer semiconductor, but also provides guidance for the design of high-performance vdWHs semiconductor-based devices.

Electronic contacts and lubricity characteristics between monolayer WSe2 and Zr2C, Zr2CY2 (Y = F or OH)

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Achieving a Superlubricating Ohmic Sliding Electrical Contact Via a 2D Heterointerface: a Computational Investigation.

Low Resistance Contact to P-Type Monolayer WSe2

Dual Transmission Channels at Metal–MoS2/WSe2 Hetero-bilayer Interfaces

Interlayer Friction and Adhesion Effects in Penta-PdSe2-Based van der Waals Heterostructures

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe 2 as high performance contacts for WSe 2 transistors

UItra-low friction and edge-pinning effect in large-lattice-mismatch van der Waals heterostructures

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Electro-lubrication in Janus transition metal dichalcogenide bilayers

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Two-dimensional Metallic Alloy Contacts with Composition-Tunable Work Functions

Interlayer Friction in Graphene/MoS2, Graphene/NbSe2, Tellurene/MoS2 and Tellurene/NbSe2 van der Waals Heterostructures

Negative differential friction coefficients of two-dimensional commensurate contacts dominated by electronic phase transition

Wear-free Sliding Electrical Contacts with Ultralow Electrical Resistivity

Electrical contact properties between Yb and few-layer WS$_2$

Superlubricity between MoS 2 Monolayers.