Abstract:A van der Waals heterostructure (vdWH) contact strategy for 2D field‐effect transistors (FETs) is proposed by introducing a vdW semiconductor intercalation between the metal electrode and the 2D channel. This strategy enabled the complementary doping within vdWHs, Ohmic contacts at electrical interfaces, and symmetric currents in p‐type and n‐type 2D‐FETs. Incorporating atomically thin 2D semiconductors (2DSCs) into the vertical complementary field‐effect transistors (CFETs) is of great significance in enabling devices to break through the sub‐nanometer scaling limit. However, due to the lack of effective doping technology and the difficult‐to‐control electrode interface, simultaneously realizing high‐performance p‐type and n‐type devices using a single metal electrode presents great challenges for 2D‐CFETs design. In this study, an innovative electrical contact strategy is proposed by constructing van der Waals heterojunction (vdWH) using 2DSCs to regulate the electrical contact properties between the metal electrode and 2DSC channel. First‐principles calculations reveal that degenerate or quasi‐degenerate complementary doping is achieved in a series of transition metal dichalcogenides (TMDs) by designing (quasi‐)broken‐gap vdWHs and utilizing their interlayer charge transfer. Metal‐2DSC contact barriers can be effectively regulated by introducing 2DSC intercalation and constructing vdWH. P‐type (quasi‐)Ohmic contacts are realized between Au electrode and various TMD channels, as well as between WTe2 channel and different metal electrodes. Moreover, quantum transport simulations present the remarkable on‐current over 102 μA μm−1 in both p‐type and n‐type 2D‐FETs by employing the vdWH and metal‐vdWH electrodes. The proposed vdWH strategy is applicable to various metal‐2DSC contacts and will shed light on future high‐performance 2D‐CFET integrations.

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Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

P-type electrical contacts for two-dimensional transition metal dichalcogenides

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Two-dimensional Metallic Alloy Contacts with Composition-Tunable Work Functions

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Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Van der Waals Heterostructure Contact Strategy for Barrier‐Free 2D Complementary Transistors

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Controlled Synthesis of Van Der Waals CoS2for Improved P-Type Transistor Contact.

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P-type Ohmic contact to MoS2 via binary compound electrodes

Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky, and P-N Heterojunctions.

Precisely Tailoring WSe2 Polarity via van der Waals Bismuth-Gold Modulated Contact