Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Controlled Synthesis of Van Der Waals CoS2for Improved P-Type Transistor Contact.

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

Controlling phase transition in WSe2 towards ideal n-type transistor

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Realizing Stable P-Type Transporting in Two-Dimensional WS2 Films.

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Performance Improvement in P-Type WS2 Field-Effect Transistors with 1T Phase Contacts

Ohmic Contacts Between Monolayer WSe2 and Two-Dimensional Titanium Carbides

Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

Low Resistance Contact to P-Type Monolayer WSe2

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors