Abstract:Ionic liquid gated field-effect transistors (FETs) based on semiconducting transition metal dichalcogenides (TMDs) are used to study a rich variety of extremely interesting physical phenomena, but important aspects of how charge carriers are accumulated in these systems are not understood. We address these issues by means of a systematic experimental study of transport in monolayer MoSe$_2$ and WSe$_2$ as a function of magnetic field and gate voltage, exploring accumulated densities of carriers ranging from approximately 10$^{14}$ cm$^{-2}$ holes in the valence band to 4x10$^{14}$ cm$^{-2}$ electrons in the conduction band. We identify the conditions when the chemical potential enters different valleys in the monolayer band structure (the K and Q valley in the conduction band and the two spin-split K-valleys in the valence band) and find that an independent electron picture describes the occupation of states well. Unexpectedly, however, the experiments show very large changes in the device capacitance when multiple valleys are occupied that are not at all compatible with the commonly expected quantum capacitance contribution of these systems, $\textit{C}$$_Q$=$\textit{e}^2$/(d$\mu$/d$\textit{n}$). This unexpected behavior is attributed to the presence of a cross quantum capacitance, which originates from screening of the electric field generated by charges on one plate from charges sitting on the other plate. Our findings therefore reveal an important contribution to the capacitance of physical systems that had been virtually entirely neglected until now. (short abstract due to size limitations - full abstract in the manuscript)

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

On-Chip Terahertz Spectroscopy for Dual-Gated van der Waals Heterostructures at Cryogenic Temperatures

Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Ultrafast Drift Current Terahertz Emission Amplification in the Monolayer WSe2/Si Heterostructure

Terahertz spectroscopy of collective charge density wave dynamics at the atomic scale

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

High-Frequency Sheet Conductance of Nanolayered WS2 Crystals for Two-Dimensional Nanodevices

Direct imaging of spatial heterogeneities in type II superconductors

Terahertz Dynamics of Quantum-Confined Electrons in Carbon Nanomaterials

Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Measurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré Superlattice

Terahertz Spin-Conductance Spectroscopy: Probing Coherent and Incoherent Ultrafast Spin Tunneling

Enhanced Terahertz Spectroscopy of a Monolayer Transition Metal Dichalcogenide

Direct measurement of ferroelectric polarization in a tunable semimetal

Nanoscale Conductivity Imaging of Correlated Electronic States in WSe 2 / WS 2 Moiré Superlattices

Characterisation of nanostructures via terahertz spectroscopy

Direct measurement of photoinduced transient conducting state in multilayer 2H-MoTe2

Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

Imaging local discharge cascades for correlated electrons in WS2/WSe2 moiré superlattices

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers