Nanoscale Conductivity Imaging of Correlated Electronic States in WSe 2 / WS 2 Moiré Superlattices

Zhaodong Chu,Emma C. Regan,Xuejian Ma,Danqing Wang,Zifan Xu,M. Iqbal Bakti Utama,Kentaro Yumigeta,Mark Blei,Kenji Watanabe,Takashi Taniguchi,Sefaattin Tongay,Feng Wang,Keji Lai
DOI: https://doi.org/10.1103/physrevlett.125.186803
IF: 8.6
2020-10-30
Physical Review Letters
Abstract:We report the nanoscale conductivity imaging of correlated electronic states in angle-aligned WSe_{2}/WS_{2} heterostructures using microwave impedance microscopy. The noncontact microwave probe allows us to observe the Mott insulating state with one hole per moiré unit cell that persists for temperatures up to 150 K, consistent with other characterization techniques. In addition, we identify for the first time a Mott insulating state at one electron per moiré unit cell. Appreciable inhomogeneity of the correlated states is directly visualized in the heterobilayer region, indicative of local disorders in the moiré superlattice potential or electrostatic doping. Our work provides important insights on 2D moiré systems down to the microscopic level.
physics, multidisciplinary
What problem does this paper attempt to address?
This paper aims to solve the problems of spatial visualization of electron - correlated states and their homogeneity research in two - dimensional transition - metal - dichalcogenide (TMD) heterobilayer structures. Specifically, the authors used the Microwave Impedance Microscopy (MIM) technique to perform nanoscale conductivity imaging of angle - aligned WSe₂/WS₂ moiré superlattices in order to observe and analyze the microscopic properties of Mott insulating states and other correlated electron states in these materials. The following points were of particular concern in the study: 1. **Observation of Mott insulating states**: Through non - contact microwave probe technology, the Mott insulating state with one hole in each moiré unit cell was observed, and this state still exists at temperatures as high as 150 K. In addition, the Mott insulating state with one electron in each moiré unit cell was observed for the first time. 2. **Direct visualization of spatial inhomogeneity**: In the heterobilayer region, significant inhomogeneity of correlated states was directly observed, which may be due to local disorder in the moiré superlattice potential or electrostatic doping. 3. **Understanding the insulating properties on the electron - and - hole - doping sides**: The study not only explored the correlated insulating states on the hole - doping side, but also reported for the first time the Mott insulating state on the electron - doping side, which is of great significance for understanding the correlated physical phenomena in these materials. 4. **Guidance for improving material quality**: Through these experimental results, the authors provided important insights for improving the material quality of two - dimensional moiré systems, which is helpful for the discovery of new electron states in these material systems in the future. In summary, this study provides important experimental evidence and technical means for understanding and improving electron - correlated states in these complex material systems through the detailed characterization of WSe₂/WS₂ moiré superlattices.