Abstract:The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect1–3, tunable Mott insulators4,5 and unconventional superconductivity6. In addition, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors7–9, but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe2)/tungsten diselenide (WSe2) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, −15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle7. The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. This work presents opportunities to control two-dimensional moiré optics through variation of the twist angle.

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2-WSe2 Heterobilayers.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers

Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer

Revealing the conduction band and pseudovector potential in 2D moiré semiconductors

Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices

Nanoscale Conductivity Imaging of Correlated Electronic States in WSe 2 / WS 2 Moiré Superlattices

Moiré trions in MoSe2/WSe2 heterobilayers

Two-Dimensional Moiré Polaronic Electron Crystals

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Moiré-engineered light-matter interactions in MoS 2 /WSe 2 heterobilayers at room temperature

Correlated interlayer exciton insulator in heterostructures of monolayer WSe2 and moiré WS2/WSe2

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

Moiré‐Pattern Modulated Electronic Structures of GaSe/HOPG Heterostructure