Abstract:We investigate the spin-valley physics (SVP) in MoSe$_2$/WSe$_2$ heterobilayers under external electric field (EF) and changes of the interlayer distance (ID). We analyze the spin ($S_z$) and orbital ($L_z$) degrees of freedom, and the symmetry properties of relevant band edges (at K, Q, and $\Gamma$ points) in high-symmetry stackings at 0 (R-type) and 60 (H-type) degree angles, the important building blocks of moiré or atomically reconstructed structures. We reveal distinct hybridization signatures of $S_z$ and $L_z$ in low-energy bands due to the wave function mixing between the layers, which are stacking-dependent and can be further modified by EF and ID. The H-type stackings favor large changes in the g-factors under EF, e. g. from $-5$ to $3$ in the valence bands of the H$^h_h$ stacking, due to the opposite orientation of $S_z$ and $L_z$ in the individual monolayers. For the low-energy dipolar excitons (DEs), direct and indirect in $k$-space, we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. We found that direct DEs carry a robust valley Zeeman effect nearly independent of the EF but tunable by the ID, which can be experimentally accessible via applied external pressure. For the momentum-indirect DEs, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. For the indirect DEs with conduction bands at the Q point for H-type stackings, we found marked variations of the valley Zeeman ($\sim 4$) as a function of the EF that notably stand out from the other DE species. Stronger signatures of the coupled SVP are favored in H-type stackings, which can be experimentally investigated in $\sim 60^\text{o}$ samples. Our study provides fundamental insights into the SVP of van der Waals heterostructures, relevant to understand the valley Zeeman of DEs and intralayer excitons.

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Formation mechanism of mirror twin grain boundaries in molecular beam epitaxy grown monolayer WSe2-MoSe2 lateral heterojunctions

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS_2-WSe_2 Heterobilayers

Conduction Band Replicas in a 2D Moiré Semiconductor Heterobilayer

Flattening conduction and valence bands for interlayer excitons in a moiré MoS$_2$/WSe$_2$ heterobilayer

Signatures of electric field and layer separation effects on the spin-valley physics of MoSe$_2$/WSe$_2$ heterobilayers: from energy bands to dipolar excitons

Hybridized intervalley moiré excitons and flat bands in twisted WSe$_2$ bilayers

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2-WSe2 Heterobilayers.

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Revealing the conduction band and pseudovector potential in 2D moiré semiconductors

Imaging moiré flat bands in 3D reconstructed WSe2/WS2 superlattices

A tunable bilayer Hubbard model in twisted WSe2

Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers

Lattice reconstruction induced multiple ultra-flat bands in twisted bilayer WSe2

Imaging moiré flat bands in three-dimensional reconstructed WSe2/WS2 superlattices

Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides