Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Joshua Hennig,Jens Klier,Stefan Duran,Kuei-Shen Hsu,Jan Beyer,Christian Röder,Franziska C. Beyer,Nadine Schüler,Nico Vieweg,Katja Dutzi,Georg von Freymann,Daniel Molter

2024-01-23

Abstract:Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10$^{-3}$ $\Omega$cm to 10$^{2}$ $\Omega$cm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.

Optics

What problem does this paper attempt to address?

This paper mainly discusses the use of terahertz time-domain spectroscopy (THz-TDS) technique to extensively measure the resistivity of semiconductor materials. Although the traditional four-point probe method is common, it has disadvantages such as material influence, speed limitation, and surface-only information. THz-TDS, as a fast and non-destructive measurement method, can overcome these limitations and has been widely used in the characterization of insulators.

The paper presents two methods based on the Drude model to extract the resistivity of silicon from THz-TDS measurements, covering a range from 10^-3 Ωcm to 10^2 Ωcm. One method is an analytical approach, and the other is an optimization approach. The effectiveness of these two methods is validated by comparing with four-point probe measurements. Furthermore, by scanning the sample in the X-Y direction to detect the non-uniformity of doping distribution, an image of resistivity is provided.

In the study, THz-TDS was used in a reflection geometry configuration to measure low-resistivity samples, which cannot be achieved by the traditional transmission geometry configuration. The paper also discusses how to calculate conductivity and carrier concentration using the Drude model, and accurately characterize various silicon wafers by mapping the resistivity distribution.

The experimental section of the paper includes silicon samples with different doping types, measured by the THz-TDS system in reflection and compared with the reference of four-point probe method. The results show that THz-TDS has a high coefficient of determination within a specific resistivity range, demonstrating the potential and applicability of this method in semiconductor resistivity characterization.