Abstract:2D van der Waals (vdW) p‐n junctions based on vertically stacked atomically thin semiconductor materials have shown tremendous potential in high‐performance integrated electronics and optoelectronics. However, unlike traditional semiconductors, the conventional doping methods to achieve p‐type and n‐type doping in 2D semiconductors remain a large challenge due to their ultrathin structures with limited physical space. Here, by means of density functional theory computations, a nonvolatile doping strategy to obtain self‐defined p‐n junctions in 2D vdW heterostructures created by assembling monolayer transition metal dichalcogenides (TMDs) on polar semiconductors (PSs) is reported. The calculated results show that the quantum‐confined Stark effect causes the band inclination of 2D PSs along the polarization direction, which allows to manipulate the type of band alignment and spatial distribution of carriers in the heterostructures via the polarization modulation. In particular, the realization of nonvolatile p‐n junctions in type‐III TMD/PS heterostructures with ultrahigh carrier concentration (≈1013 ‐ 1014 cm‐2) is demonstrated, and the spatial distribution of charge carriers in the heterostructures can be tuned by the polarization switching. This work provides a nondestructive doping strategy to obtain programmable vdW p‐n junctions with high carrier concentration and band‐engineering approach for the development of versatile 2D electronics and optoelectronics. A nondestructive doping strategy is demonstrated by the integration of atomically thin transition metal dichalcogenides on 2D polar semiconductors (PSs) into van der Waals heterostructures. The band inclination of 2D PSs induced by the quantum‐confined Stark effect allows to manipulate the band alignment and spatial distribution of carriers in the heterostructures via the polarization switching.

Programmable Photo‐Induced Doping in 2D Materials

Modulation Doping: A Strategy for 2D Materials Electronics

Controllable Doping in 2D Layered Materials

Photoinduced Doping in Heterostructures of Graphene and Boron Nitride

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light.

Photo-induced Doping in Graphene/Boron Nitride Heterostructures

Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies

Wavelength‐Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe2 for Artificial Synaptic Features

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Layer dependence photoelectrochemical properties of p–n homojunction 2D nanomaterial and energy storage device

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals

Polarization‐Induced Band‐Alignment Transition and Nonvolatile p‐n Junctions in 2D Van der Waals Heterostructures

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

Ultraviolet Light-Induced Persistent and Degenerated Doping in MoS 2 for Potential Photocontrollable Electronics Applications.

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Two-dimensional Non-Volatile Programmable P–n Junctions