Abstract:An intralayer/interlayer codoping strategy with charge‐space synergy is introduced to achieve stable and sustainable hole doping in 2D semiconductors. The hole mobility of WSe2 is enhanced by 100‐fold to 92 cm2 V−1 s−1. A complementary metal‐oxide‐semiconductor (CMOS) inverter and complex logic functions (NOR and XNOR), as well as large‐area device arrays are demonstrated to showcase its applications and scalability. 2D semiconductors show promise as a competitive candidate for developing future integrated circuits due to their immunity to short‐channel effects and high carrier mobility at atomic layer thicknesses. The inherent defects and Fermi level pinning effect lead to n‐type transport characteristics in most 2D semiconductors, while unstable and unsustainable p‐type doping by various strategies hinders their application in many areas, such as complementary metal‐oxide‐semiconductor (CMOS) devices. In this study, an intralayer/interlayer codoping strategy is introduced that stabilizes p‐type doping in 2D semiconductors. By incorporating oppositely charged ions (F and Li) with the intralayer/interlayer of 2D semiconductors, remarkable p‐type doping in WSe2 and MoTe2 with air stability up to 9 months is achieved. Notably, the hole mobility presents a 100‐fold enhancement (0.7 to 92 cm2 V−1 s−1) with the codoping procedure. Structural and elemental characterizations, combined with theoretical calculations validate the codoping mechanism. Moreover, a CMOS inverter and more complex logic functions such as NOR and XNOR, as well as large‐area device arrays are demonstrated to showcase its applications and scalability. These findings suggest that stable and straightforward intralayer/interlayer codoping strategy with charge‐space synergy holds the key to unlocking the potential of 2D semiconductors in complex and scalable device applications.

Modulation Doping: A Strategy for 2D Materials Electronics

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Controllable Doping in 2D Layered Materials

Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Doping Two-Dimensional Materials: Ultra-Sensitive Sensors, Band Gap Tuning and Ferromagnetic Monolayers

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics

Programmable Photo‐Induced Doping in 2D Materials

Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: the Phosphorene and MoS2 from Charge-Correction Method

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Modulation of Semiconductor Doping of 2D GeSe in H-Bn/gese Van Der Waals Heterostructure

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

Photoinduced Doping in Heterostructures of Graphene and Boron Nitride

Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures

Photo-induced Doping in Graphene/Boron Nitride Heterostructures

Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.