Abstract:By optimizing platinization condition of MoS2 host crystals, dimensionality‐tailored Pt as nanofilm, nanoparticles, and atoms incorporated into the MoS2 host crystals are achieved. The dimensionality‐tailored Pt‐MoS2 heterostructures enable to manipulate their energy band structure, leading to show outstanding optoelectronic performance under near infrared illumination. 2D van der Waals (vdW) hetero integration, which features exotic interplanar interactions derived from mixed‐dimensional heterostructures, is an emergent platform for implementing high‐performance electronics and broadband/wavelength‐tunable photodetectors. However, the production of large‐area 2D spatially homogeneous transition‐metal dichalcogenides (TMDs) and elucidation of the electrostatic dynamics governing the interlayer interactions are two paramount prerequisites for realizing practical 2D‐TMD‐heterostructure‐based photodetectors. Here, a wafer‐scale synthesis of mixed‐dimensional Pt–MoS2‐based vdW heterostructures is unprecedentedly demonstrated by manipulating the platinization conditions. The rationally designed platinization yields dimensionality‐tailored Pt, including Pt nanofilm, Pt nanoparticles, and Pt atoms, with MoS2 as host platform. From density functional theory calculations, this study insights that Mo vacancy sites on the MoS2 surface are thermo‐dynamically favorable sites for Pt with an adsorption energy of −2.25 eV, then Pt clusters are sequentially formed neighboring the specific Pt‐substituted position with a formation energy of 1.30 eV. Intensive microscopic and spectroscopic analyses reveal the structural, chemical, and electrical features, validating the proposed dynamics‐related mechanism. The dimensionality‐tailored vdW heterostructures exhibit outstanding optoelectrical properties with excellent photoresponsivity (2.04 mA W−1) and highly sensitive detectivity (9.82 × 106 cm Hz1/2 W−1).

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The Spontaneous Directional Transformations of the Layers and Chemical Bonds : a Study Combining First-principle Calculations and Experiments

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Synthesis of Large-Scale Few-Layer PtS2 Films by Chemical Vapor Deposition

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

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Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe 2 via Tellurization

Thickness-Tunable Synthesis of Ultrathin Type-II Dirac Semimetal PtTe2 Single Crystals and Their Thickness-Dependent Electronic Properties

Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect

Controllable Growth of Type‐ii Dirac Semimetal PtTe2 Atomic Layer on Au Substrate for Sensitive Room Temperature Terahertz Photodetection

MBE-grown ultrathin PtTe2 films and their layer-dependent electronic structures

Thickness dependent electronic properties of Pt dichalcogenides

Interface-driven seebeck effect in two-dimensional trilayer-stacked PtTe2/MoS2/MoS2 heterostructures via electron–electron interactions

Diverse modes regulated photoresponse and high-resolution imaging based on van der Waals semimetal PtTe2/semiconductor MoTe2 junctions

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Observation of Negative THz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

Monolayer Ptse2, A New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

Wafer‐Scale Synthesis of Mixed‐Dimensional Heterostructures via Manipulating Platinization Conditions

Observation of Negative Terahertz Photoconductivity in Large Area Type-II Dirac Semimetal PtTe2

Growth of large scale PtTe, PtTe2 and PtSe2 films on a wide range of substrates