Direct Tellurization of Pt to Synthesize 2D PtTe 2 for High-Performance Broadband Photodetectors and NIR Image Sensors
Xiao-Wei Tong,Ya-Nan Lin,Rui Huang,Zhi-Xiang Zhang,Can Fu,Di Wu,Lin-Bao Luo,Zhong-Jun Li,Feng-Xia Liang,Wei Zhang
DOI: https://doi.org/10.1021/acsami.0c14996
2020-11-17
Abstract:Platinum telluride (PtTe<sub>2</sub>) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe<sub>2</sub> toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe<sub>2</sub> films and the influence of growth conditions on the morphology of PtTe<sub>2</sub>. Electrical analysis reveals that the as-grown PtTe<sub>2</sub> films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe<sub>2</sub> and Si results in the formation of a PtTe<sub>2</sub>/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe<sub>2</sub>-based photodetector displays a broadband photoresponse to incident radiation in the range of 200–1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The <i>R</i> and <i>D</i>* of the PtTe<sub>2</sub>-based photodetector are found to be 0.406 A W<sup>–1</sup> and 3.62 × 10<sup>12</sup> Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τ<sub>rise</sub> and τ<sub>fall</sub> is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe<sub>2</sub>-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe<sub>2</sub> material will be useful for application in NIR optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c14996?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c14996</a>.AFM analysis of the PtTe<sub>2</sub> film tellurized at 873 K with different thicknesses; roughness of the PtTe<sub>2</sub> nanofilm with different thicknesses; FESEM images of the PtTe<sub>2</sub> sample with different thicknesses of 4.81, 14.6, 28.8, 48.4, and 96.7 nm tellurized at 773 K; XPS analysis of the as-synthesized PtTe<sub>2</sub> crystals; absorption coefficients of bulk, 5-layer, 2-layer, and 1-layer of PtTe<sub>2</sub>; X-ray diffraction pattern of the PtTe<sub>2</sub> tellurized at different temperatures; Raman spectra of the PtTe<sub>2</sub> film tellurized at different temperatures; FESEM image of the PtTe<sub>2</sub> film tellurized at different temperatures; FESEM image of the PtTe<sub>2</sub> film tellurized at 873 K from the Pt film with a thickness of 3.0 nm under an argon gas atmosphere with flow rates of 30.0, 50.0, 70.0, and 90.0 SCCM; numerical distribution of PtTe<sub>2</sub> nanoparticle diameter in selected areas; conductivity as a function of thickness; energy band diagram of bulk PtTe<sub>2</sub> simulated at PBE, PBE+SOC, and HSE06 methods; schematic diagram of the fabrication procedure of PtTe<sub>2</sub>/Si-based NIRPD; <i>I–V</i> characteristics of the Au/PtTe<sub>2</sub>/Au device without illumination; dark current of the PtTe<sub>2</sub>/Si heterojunction under a series of intensities; the response of PtTe<sub>2</sub>/Si NIRPD to fast-switching 980 nm light; photoresponse of PtTe<sub>2</sub>/Si-based NIRPD was characterized at a time interval of 2 months; XRD characterization of the PtTe<sub>2</sub> sample after 2 months; and Raman spectra of the PtTe<sub>2</sub> film after storage in atmosphere for 2 months (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c14996/suppl_file/am0c14996_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology