Abstract:2D noble metal di- chalcogenides (NMDC or NMC) materials have attracted enormous research interests due to their novel physical and chemical properties with confined dimensions. Here we present two of our experimental works in investigating the growth of PtS and PtSx. (i) Platinum monosulfide as one of the most common platinum-group minerals has been less studied due to either the low purity in the natural product or the extremely high-pressure conditions for synthesis. Recently, platinum monosulfide (PtS) 2D membranes have emerged as rising-star materials for fundamental Raman and X-ray photoelectron spectral analysis as well as device exploration. However, a large-area homogeneous synthesis route has not yet been proposed and released. In this communication, we report a facile metal sulfurization strategy for the synthesis of a 4-inch wafer-scale PtS film. Enhanced characterization tools have been employed for thorough analysis of the crystal structure, chemical environment, vibrational modes, and atomic configuration. Furthermore, through theoretical calculations the phase diagram of the Pt–S compound has been plotted for showing the successful formation of PtS in our synthesis conditions. Eventually, a high-quality PtS film has been reflected in device demonstration by a photodetector. Our approach may shed light on the mass production of PtS films with precise control of their thickness and homogeneity as well as van der Waals heterostructures and related electronic devices. (ii) PtS x , as a more recent 2D material that aroused extensive research interests, has been applied in electronic and optoelectronic devices because of its excellent electronic characteristics and commendable stability. However, the synthesis of large-scale uniform PtS x remains a challenge. Here we studied a modified chemical vapor deposition (CVD) method to grow large-scale uniform PtS x films on SiO 2 /Si and c-plane sapphire substrates, which can avoid some disadvantages of the mechanical exfoliation method in the device fabrication. The large area uniform PtS x films are achieved through Pt sulfurization using H 2 S gas, replacing the sulfur powder in traditional methods, as the sulfur source. The material characterizations successfully proved that our modified CVD method is feasible and repeatable, and the PtS x film can be synthesized on different substrates. The PtS x photodevices show good photoresponse properties with a wide spectrum response range. The PtS x /sapphire device shows a better photoresponse in terms of the detectivity (9.17 × 10 9 Jones) and the responsivity (0.31 A W −1 ) than that of the PtS x /SiO 2 /Si device in our experiment, as well as one-year air stability, which may be caused by the different PtS x film quality due to a lattice mismatch difference between the PtS x and the different substrates. These results offer the design and synthesis technology for large-scale, uniform, and stable PtS and PtS x film, as well as an example of photoresponse-enhanced devices which could be generalizable to other transition metal dichalcogenides (TMDCs) and devices for future development and applications. Figure 1

Growth of large scale PtTe, PtTe2 and PtSe2 films on a wide range of substrates

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Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Research Progress on the Preparations, Characterizations and Applications of Large Scale 2D Transition Metal Dichalcogenides Films

Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique

Thickness dependent electronic properties of Pt dichalcogenides

Monolayer Ptse2, A New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

(Digital Presentation) Present Status and Future Prospects of Large Area Growth and Devices of Two-Dimensional Materials

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MBE-grown ultrathin PtTe2 films and their layer-dependent electronic structures

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Electrical devices from top-down structured platinum diselenide films

Synthesis of Large-Scale Few-Layer PtS2 Films by Chemical Vapor Deposition

Morphology-controlled growth of large-area PtSe2 films for enhanced hydrogen evolution reaction

Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Controllable Growth of Type‐ii Dirac Semimetal PtTe2 Atomic Layer on Au Substrate for Sensitive Room Temperature Terahertz Photodetection

Chemical Vapor Deposition Grown Wafer-Scale 2d Tantalum Diselenide With Robust Charge-Density-Wave Order

Crossover from 2D Metal to 3D Dirac Semimetal in Metallic PtTe 2 Films with Local Rashba Effect

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Selection Role of Metal Oxides into Transition Metal Dichalcogenide Monolayers by a Direct Selenization Process