Abstract:We have measured the electronic structure of thin Pb films grown on highly oriented pyrolytic graphite (HOPG) by angle-resolved photoemission spectroscopy. Quantum well states (QWSs) corresponding to confined Pb valence electrons are observed. Their energy positions are fixed, but their intensities evolve for increasing Pb coverages. The results indicate that the films are rough, consisting of multiple thicknesses. Nevertheless, the thickness distribution is sufficiently narrow to allow a unique assignment for each QWS peak in terms of a quantum number and the exact film thickness in atomic layers. For increasing Pb coverages of up to 10 monolayers (ML), the even film thicknesses of 2, 4, 6, 8, and 10 ML are much more prevalent than the odd film thicknesses of 1, 3, 5, 7, and 9 ML, thus suggesting significant differences in surface energy between the even and odd thicknesses. These results are consistent with an available first-principles calculation of the surface energies of freestanding films; an implication is that the interaction between the Pb film and the HOPG substrate is weak. The in-plane dispersion relations of the QWSs are measured. The effective masses at the surface zone center agree well with the results calculated from the bulk Pb band structure, in sharp contrast to the strongly enhanced or anomalous effective masses in Pb films grown on Si(111) as reported previously. This finding indicates that the anomalous effective masses in Pb/Si(111) are not caused by increased electron correlation effects in a confined geometry, but are rather attributable to a strong interfacial interaction between the QWSs and the substrate electronic structure.

Study of Surface Oxidation of PbTe Films

Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Iv-Vi Semiconductor Pbte(111) Surface

Reconstructions and Stabilities of PbTe(1 1 1) Crystal Surface from Experiments and Density-Functional Theory

Microstructural Properties of Single Crystalline Pbte Thin Films Grown on Baf2(111) by Molecular Beam Epitaxy

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Observation of Phonon Modes in Epitaxial PbTe Films Grown by Molecular Beam Epitaxy

Interface behavior of Mn/PbTe(111) studied by scanning tunneling microscopy and X-ray photoemission spectroscopy

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Mn/PbTe(111) interface behavior studied by photoemission

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Studies of Structure,Composition and Photoelectric Properties of CdTe Thin Film Grown by Vacuum Sublimation

Quantized Electronic Structure and Growth of Pb Films on Highly Oriented Pyrolytic Graphite

First-Principles Study of Atomic Structure and Subsurface Dipoles of PbTiO3 (001) Surfaces

Resonant Nature of Intrinsic Defect Energy Levels in Pbte Revealed by Infrared Photoreflectance Spectroscopy

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Study of Growth of [111]-Oriented CdTe Thin Films by MBE

Surface layers of the sol-gel derived PbTiO3 thin films