Abstract:PtSe2 is a promising layered 2D material for applications in photonic, electronic, and sensing devices. Here the controlled synthesis of PtSe2 by the scalable method of metal–organic chemical vapor deposition is introduced. Extensive Raman, X‐ray photoelectron, and X‐ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the enhanced qualities of the films. Platinum diselenide (PtSe2), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large‐scale and reliable high‐quality PtSe2. In this study, the growth of PtSe2 is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X‐ray photoelectron, and X‐ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe2. Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic‐scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe2 layers with controllable thickness, offering a key requirement for the implementation of PtSe2 in future applications.

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Thickness-Tunable Synthesis of Ultrathin Type-II Dirac Semimetal PtTe2 Single Crystals and Their Thickness-Dependent Electronic Properties

Epitaxial Growth of Monolayer PdTe2 and Patterned PtTe2 by Direct Tellurization of Pd and Pt surfaces

Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Wafer-Scale Anion Exchange Conversion of Nonlayered PtS Films to van der Waals Two-Dimensional PtTe 2 Layers with Negative Photoresponsiveness

Two-dimensional Superconductivity and Topological States in PdTe2 Thin Films

Wafer-scale synthesis of 2D PtTe 2 thin films with high spin–orbit torque efficiency

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Synthesis of Large-Scale Few-Layer PtS2 Films by Chemical Vapor Deposition

Crossover from 2D Metal to 3D Dirac Semimetal in Metallic PtTe 2 Films with Local Rashba Effect

2D Materials: Large‐Area and High‐Quality 2D Transition Metal Telluride (adv. Mater. 3/2017)

Controllable Growth of Type‐ii Dirac Semimetal PtTe2 Atomic Layer on Au Substrate for Sensitive Room Temperature Terahertz Photodetection

Scalable Metal–Organic Chemical Vapor Deposition of High Quality PtSe2

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

Low-temperature synthesis and electrocatalytic application of large-area PtTe2 thin films

Metal-Organic Chemical Vapor Deposition of PtSe2

Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Synthesis of Superconducting Two-Dimensional Non-Layered PdTe by Interfacial Reactions

Wafer-Scale Growth of Ultrauniform 2D PtSe 2 Films with Spatial and Thickness Control through Multi-step Metal Conversion