Abstract:Abstract Atomically thin transition metal dichalcogenides (TMDs), together with their polymorphism, provide promising alternatives for next generation electronic devices and a platform to explore exotic quantum phenomena. However, a large-scale synthesis method that can reliably produce high-quality two-dimensional (2D) TMDs with controlled phase is still lacking. Instead, TMDs with high concentration of defects and defect-stabilized metastable crystalline phases are often obtained via conventional chemical vapor deposition. Here we developed a liquid-vapor (LV) technique to exploit liquid precursors to significantly suppress the equilibrium shift to the decomposition direction and successfully synthesized high-quality TMDs. We highlight the importance of exploiting the synergism of equilibrium and kinetics to facilitate the synthesis reaction (forward) and to impede decomposition (reverse). A high concentration of reactants in the liquid phase also maximizes the kinetic rate of defect repairing. We demonstrated the advantages of LV method by synthesizing diverse high-quality 2D metal tellurides with controllable polymorphs, which would be challenging, if not impossible, to realize by using conventional methods due to weak metal-tellurium bonds, thermal instability and the co-existence of mixed crystalline phases. In particular, we successfully synthesized high-quality monolayer 2H MoTe2, which is only possible when Te defect level is substantially suppressed. Our approach provides a new paradigm in high-quality and large-scale materials synthesis and can be readily extended to a variety of quantum materials, potentially accelerating both research and industrial initiatives.

2D Materials: Large‐Area and High‐Quality 2D Transition Metal Telluride (adv. Mater. 3/2017)

Structure and Transport Properties of the Quasi-One-dimensional Telluride Ta1.2Os0.8Te4

Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Structure and transport properties of the quasi-one-dimensional telluride Ta 1.2 Os 0.8 Te 4

Direct Visualization of a Two-Dimensional Topological Insulator in the Single-Layer1t′−wte2

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

N ov 2 01 9 Topological phase transition between distinct Weyl semimetal states in MoTe 2

Ultrahigh Yield and Large-Scale Fast Growth of Large-Size High-Quality Van Der Waals Transition-Metal Telluride Single Crystals

Ion adsorption promotes Frank-van der Merwe growth of 2D transition metal tellurides

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

Controllable synthesis and tunable properties of topological material WTe<sub>2</sub>

Liquid-vapor Growth of Atomically Thin Metal Tellurides with Controllable Polymorphism

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Superconductivity and Fermi Surface Anisotropy in Transition Metal Dichalcogenide NbTe 2

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

MoTe2: Semiconductor or Semimetal?

MoTe 2 : Semiconductor or Semimetal?

Surfactant‐free Ultrasonication‐assisted Synthesis of 2d Tellurium Based on Metastable 1T'‐MoTe2

High Phase Purity of Large-Sized 1T'-Mos2 Monolayers with 2D Superconductivity.

High Thermoelectric Performance in Two-Dimensional Tellurium: an Ab Initio Study.

Chemical Vapor Deposition Grown Wafer-Scale 2d Tantalum Diselenide With Robust Charge-Density-Wave Order