Abstract:In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.

Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor

Nonvolatile Ferroelectric Field-Effect Transistors.

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

Multifunctional MoTe 2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

Reconfigurable van der Waals Ferroionic Barristor for Multifunctional Nanoelectronics

Reconfigurable SWCNT ferroelectric field-effect transistor arrays

Multifunctional MoTe2 Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor Vdw Architectures (adv. Mater. 15/2022)

Reconfigurable Ferroelectric Electrostatic Doped Negative Capacitance Nanosheet Field-Effect Transistors with Enhanced ION/IOFF and Scaled VDD < 0.45 V

Sensing single domains and individual defects in scaled ferroelectrics

Ferroelectric Negative Capacitance Field Effect Transistor

Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Reconfigurable Dielectric Engineered WSe 2 /HZO Mem-transistor