Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

Demonstration of Electron/Hole Injections in the Gate of $P$-Gan/algan/gan Power Transistors and Their Effect on Device Dynamic Performance

Impact of Carrier Injections on the Threshold Voltage in P-Gan Gate AlGaN/GaN Power HEMTs

Effect of Hole-Injection on Leakage Degradation in a &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$p$ &Lt;/tex-Math> &Lt;/inline-Formula>-gan Gate AlGaN/GaN Power Transistor

Mechanism of Threshold Voltage Shift in ${p}$ -Gan Gate AlGaN/GaN Transistors

Mechanism of Leakage Current Increase in P-Gan Gate AlGaN/GaN Power Devices Induced by ON-state Gate Bias

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Exploitation of Hole Injection and Spreading for Dynamic Enhancement in P-Gan Gate HEMT under Room/High Temperatures

Gate Leakage Mechanisms in Normally off P-Gan/algan/gan High Electron Mobility Transistors

The Effect of SiN X Film for H Plasma Implantation in P-Gan/algan/gan High Electron Mobility Transistors

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of Gan-On-Si Heterojunction Power Transistors

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

First Demonstration of a Self-Aligned P-Channel GaN Back Gate Injection Transistor

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Observation Of Self-Recoverable Gate Degradation In P-Gan Algan/Gan Hemts After Long-Term Forward Gate Stress: The Trapping & Detrapping Dynamics Of Hole/Electron