Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

Investigation of Carrier Transport and Recombination at Type-Ii Band Aligned P-Nio/algan Interface in P-Nio Gate AlGaN/GaN HEMTs under Forward Bias

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Impact of Carrier Injections on the Threshold Voltage in P-Gan Gate AlGaN/GaN Power HEMTs

Current Transport Dynamics and Stability Characteristics of the NiO X Based Gate Structure for Normally-off GaN HEMTs

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Demonstration of Electron/Hole Injections in the Gate of $P$-Gan/algan/gan Power Transistors and Their Effect on Device Dynamic Performance

Investigation of the Electroluminescence Spectrum Shift of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes under Direct and Pulsed Currents

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions