Abstract:GaN-based heterojunction field effect transistors (HFETs) are strong contenders to replace vacuum tube-based devices in the high power, and high frequency arena. However, the piezoelectric stain, exploited to generate high density two-dimensional electron gases (2DEGs) in AlGaN/GaN devices is not necessarily desirable nor might it bode well in terms of device reliability. By using lattice-matched InAlN as the barrier, even higher densities of 2DEG and now respectable DC and RF performance can be achieved while at the same time avoiding the strain and subsequent reliability issues in the devices. However, little work has been done in identification of trapping mechanisms in the InAlN-based devices. The trapping is at the heart of the reduced RF performance of all the GaN-based devices, limiting the maximum attainable RF power. In this work, transient current spectroscopy, which observes the dynamics of the drain current during gate lag measurements, is utilized to ascertain information about the trapping levels, cross sections, and spatial locations of traps in the InAlN-based devices. Preliminary measurements indicate that one of the traps identified in this work (at 0.12eV) is similar to one measured by deep level transient spectroscopy (DLTS) in similar structures. Investigations of this type are imperative for the further development and implementation of this highly promising material system.

Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

A Study of the Interface and the Related Electronic Properties in N-Al0.35ga0.65n/Gan Heterostructure

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Identification And Elimination Of Inductively Coupled Plasma-Induced Defects In Alxga1-Xn/Gan Heterostructures

Identification and elimination of inductively coupled plasma-induced defects in Al <sub> <i>x</i> </sub> Ga <sub> 1- <i>x</i> </sub> N/GaN heterostructures

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate

Corrigendum: Analysis of Interface Trap States in InAlN/AlN/GaN Heterostructures (2014 Semicond. Sci. Technol. 29 095011)

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Electronic Properties and Passivation Mechanism of AlGaN/GaN Heterojunction with Vacancies: a DFT Study

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Investigation of Carrier Transport and Recombination at Type-Ii Band Aligned P-Nio/algan Interface in P-Nio Gate AlGaN/GaN HEMTs under Forward Bias

Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors.

Transient Leakage Current Technique for Mis Hemt (al2o3/algan/gan) Dielectric Semiconductor Interface Property Characterization

Current Transport Mechanisms of InGaN Metal-Insulator-semiconductor Photodetectors

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier