Abstract:A novel effective reliability improvement technology for gallium nitride (GaN) devices and passivation dielectric stack consisting of a plasma-enhanced atomic layer deposition (PEALD) grown aluminum nitride (AlN, 5 nm) and a low-pressure chemical vapor deposition (LPCVD) grown silicon nitride (SiNx, 30 nm) in normally- OFF GaN metal–insulator–semiconductor field-effect transistors (MIS-FETs) is proposed. This reliability improvement technique features an in situ H2 (15%)/N2 (85%) plasma pretreatment in a PEALD system before the deposition of PEALD AlN. The quality of the AlN/(Al)GaN interface, threshold voltage instability, and dynamic ${R}_{\text {on}}$ in the normally- OFF GaN MIS-FETs with and without the in situ H2 (15%)/N2 (85%) plasma pretreatment was investigated using various methods. The equivalent parallel conductance method, high-frequency capacitance-voltage, time-of-fly (TOF) stress/measures, and quasi-static ${I}_{\text {D}}$ – ${V}_{\text {D}}$ methods were used in the experimental studies. The results showed that the in situ H2 (15%)/N2 (85%) plasma pretreatment technique is effective in improving the quality of the AlN/GaN interface. The devices with the in situ H2 (15%)/N2 (85%) plasma pretreatment had improved ${V}_{\text {th}}$ stability and lower ${R}_{\text {on}, {dynamic}}/{R}_{\text {on}, {static}}$ ratio, which was due to the reduced interface trap densities between the AlN/GaN interface and the improved mobility of 2-D electron gas (2DEG). The time-dependent dielectric breakdown (TDDB) and Weibull performance further verified that the proposed in situ H2 (15%)/N2 (85%) plasma pretreatment techniques were reliable in improving the reliability of GaN power devices.

Identification and elimination of inductively coupled plasma-induced defects in Al <sub> <i>x</i> </sub> Ga <sub> 1- <i>x</i> </sub> N/GaN heterostructures

Identification And Elimination Of Inductively Coupled Plasma-Induced Defects In Alxga1-Xn/Gan Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Etching Damage Analysis and Optimization of Inductively Coupled Plasma Etching of GaN

Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method

Investigation of atomic layer deposition methods of Al2O3 on n -GaN

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Characteristics of N-Gan after ICP Etching

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

The in-situ luminescence measurements of GaN/Al 2 O 3 film under different energy proton irradiation

Effect of annealing on the surface characteristics of GaN-LED with AlGaN cladding after ICP dry etching

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface