Abstract:Meeting the demanding performance requirements of semiconductor devices without compromising reliability is a challenging endeavor. This study introduces a novel approach to streamlining the semiconductor design process. A machine learning‐assisted design framework is proposed to optimize field plate structures and perform inverse design. The framework combines technology computer‐aided design, machine learning, and optimization, streamlining the design process. GaN High Electron Mobility Transistors (HEMTs) plays a vital role in high‐power and high‐frequency electronics. Meeting the demanding performance requirements of these devices without compromising reliability is a challenging endeavor. Field Plates are employed to redistribute the electric field, minimizing the risk of device failure, especially in high‐voltage operations. While machine learning is applied to GaN device design, its application to field plate structures, known for their geometric complexity, is limited. This study introduces a novel approach to streamlining the field plate design process. It transforms complex 2D field plate structures into a concise feature space, reducing data requirements. A machine learning‐assisted design framework is proposed to optimize field plate structures and perform inverse design. This approach is not exclusive to the design of GaN HEMTs and can be extended to various semiconductor devices with field plate structures. The framework combines technology computer‐aided design (TCAD), machine learning, and optimization, streamlining the design process.

A novel field plate with arcuate end for improving GaN HEMTs

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Optimization AlGaN/GaN HEMT with Field Plate Structures

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

AI‐assisted Field Plate Design of GaN HEMT Device

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Novel Drain-Connected Field Plate GaN HEMT Designs for Improved VBD–RON Tradeoff and RF PA Performance

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

A Novel Junction Field Plates AlGaN/GaN Heterostructure Field Effect Transistors with High Breakdown Voltage and Baliga's Figure of Merit for Power Electronics Application

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

A novel AlGaN/GaN HEMTs technology for intelligent electric network application

2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate